Stress compensation in GaAs–Al0.24 Ga0.76 As1−y Py LPE binary layers
- 1 November 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (11) , 4735-4737
- https://doi.org/10.1063/1.1663127
Abstract
To improve the performance and reliability of heterostructure GaAs lasers, it is important to reduce stress in the epitaxial layers caused by lattice mismatch between GaAs and AlxGa1−xAs. More precise measurements than previously available have been made on the lattice mismatch of binary layers of GaAs–Al0.24Ga0.76As1−yPy and GaAs–Al0.36Ga0.64As1−yPy from radius‐of‐curvature measurements. The heterostructures were grown by LPE, with various atom fractions of P, on (100) and (211) GaAs substrates. Liquidus values of P concentration at 780°C growth temperature to achieve room‐temperature lattice matching have been determined to ±4%. The threshold value of the lattice mismatch and layer thickness product on (211) substrates necessary to avoid misfit dislocations is given.This publication has 11 references indexed in Scilit:
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