A monolithic W-band three-stage LNA using 0.1 mu m InAlAs/InGaAs/InP HEMT technology
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 519-522 vol.2
- https://doi.org/10.1109/mwsym.1993.276886
Abstract
A monolithic W-band three-stage low-noise amplifier (LNA) based on 0.1- mu m pseudomorphic (PM) InAlAs/InGaAs/InP high-electron-mobility transistors (HEMTs) has been developed. This LNA has demonstrated a noise figure of 4.3 dB and an associated small-signal gain of 19 dB at 100 GHz with a low DC power consumption of 20 mW. This demonstrates the potential of InP HEMT technology for higher millimeter-wave applications. The gain and noise performance is comparable with the best reported results of the monolithic W-band LNA using GaAs-based PM HEMTs even at this first iteration phase of the development. The HEMTs discussed consume only 30% of the DC power typically needed in the GaAs-based HEMT LNAs with the same device periphery and design approach.<>Keywords
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