140 GHz 0.1 mu m gate-length pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.60/Ga/sub 0.40/As/InP HEMT

9 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 239-242
https://doi.org/10.1109/iedm.1991.235458

Abstract

The authors report the design, fabrication, and millimeter-wave performance of 0.1- mu m T-gate pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.60/Ga/sub 0.40/As/InP high electron mobility transistors (HEMTs). When tuned and biased for minimum noise, the device achieved a noise figure of 1.3 dB with 8.2-dB associated gain at 95 GHz. When tested at D-band, the device achieved a gain of 7.3 dB at 141.5 GHz. The gain at both these frequencies is the highest ever reported for InP HEMTs, and demonstrates the feasibility of this device technology for operating at frequencies beyond 100 GHz.<>

Keywords

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