Advances in processing and properties of perovskite thin-films for FRAMs, DRAMs, and decoupling capacitors

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Abstract
Highly oriented, dense, and crack-free ferroelectric and paraelectric thin-films on three inch diameter Pt/Ti/Si3N4/Si (100) substrates were obtained by polymeric sol-gel processing. Ferroelectric PZT thin-films were fabricated at temperatures as low as 550°C within 15 minutes by rapid thermal annealing. The films heat treated at 700°C for 5 minutes were single grain thick and exhibited Pr, Psp, and Ec in the ranges of 29–32 μC/cm2, 44–53 μC/cm2, and 50–60 kV/cm, respectively, and high speed switching times below 5 ns on 30×30 μm2 electrodes. A switching time of 2.7 ns was observed on 19×19 μm2 area electrodes at a field of 200 kV/cm. Results of low and high field characterization on paraelectric PLT thin-films which were conventionally heat treated indicated that it has an excellent potential for use in ULSI DRAMs and as decoupling capacitors. These films showed a high charge storage density (15 μC/cm2) and a low leakage current (0.5 μA/cm2) at a field of 200 kV/cm. Also, the charging time for a capacitor area of 1 μm2 at 200 kV/cm was estimated to be 0.10 ns.