Formation of Ni silicides on (001)Si with a thin interposing Pt layer
- 1 July 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 18 (4) , 1176-1179
- https://doi.org/10.1116/1.582321
Abstract
The formation of Ni silicides on (001)Si with a thin interposing Pt layer has been investigated. NiSi was observed to be the only silicide phase for the samples annealed at 500–800 °C with a thin interposing Pt layer. The sheet resistance maintained the same low level in a wide temperature range. Pt addition was found to retard significantly the formation of nickel silicides and enhance the thermal stability of NiSi thin films on (001)Si. For Ni(30 nm)/Pt(1.5 nm)/(001)Si, the process window of NiSi was extended to 500–800 °C. The effects of a thin interposing Pt layer on the formation of Ni silicides on (001)Si are discussed.Keywords
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