Compatibility of NiSi in the self-aligned suicide process for deep submicrometer devices
- 1 December 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 270 (1-2) , 567-572
- https://doi.org/10.1016/0040-6090(95)06936-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Thermal Stability of Thin Submicrometer Lines of CoSi2Journal of the Electrochemical Society, 1993
- Incorporation of metal silicides and refractory metals in VLSI technologyApplied Surface Science, 1991
- Thermal stability and interface bowing of submicron TiSi2/polycrystalline siliconThin Solid Films, 1991
- Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/IEEE Transactions on Electron Devices, 1991
- Disintegration of TiSi2 on narrow poly-Si lines at high temperaturesJournal of Vacuum Science & Technology B, 1990
- X-ray total-external-reflection–Bragg diffraction: A structural study of the GaAs-Al interfaceJournal of Applied Physics, 1979