Thermal stability and interface bowing of submicron TiSi2/polycrystalline silicon
- 1 March 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 198 (1-2) , 53-66
- https://doi.org/10.1016/0040-6090(91)90324-q
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- High Temperature Process Limitation on TiSi2Journal of the Electrochemical Society, 1986
- Enhanced grain growth of phosphorus-doped polycrystalline silicon by titanium silicide formationApplied Physics Letters, 1986
- Formation of silicides by rapid thermal annealing over polycrystalline siliconJournal of Applied Physics, 1986
- Implanted noble gas atoms as diffusion markers in silicide formationThin Solid Films, 1975