Dependence of thermal stability of the titanium silicide/silicon structure on impurities
- 19 February 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (8) , 725-727
- https://doi.org/10.1063/1.103314
Abstract
The effect of impurity on the thermal stability of titanium silicide (TiSi2)/single-crystal silicon (Si) structures has been studied. It is found that nitrogen and oxygen in the TiSi2 film significantly influence the morphological changes of a TiSi2/Si structure during high-temperature annealing at 1100 °C for 2–20 s. Nitrogen impurity improves the thermal stability of the TiSi2/Si structure, whereas oxygen degrades it.Keywords
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