Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions
- 1 November 1999
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 355-356, 412-416
- https://doi.org/10.1016/s0040-6090(99)00546-5
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Formation of C54–TiSi2 in titanium on nitrogen-ion-implanted (001)Si with a thin interposing Mo layerJournal of Materials Research, 1999
- Low-resistivity TiSi2 contacts on nitrogen implanted ultra-shallow junctionsMaterials Chemistry and Physics, 1997
- Application of nitrogen implantation to ULSINuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1997
- Mechanism of nitrogen coimplant for suppressing boron penetration in p+-polycrystalline silicon gate of p metal–oxide semiconductor field effect transistorApplied Physics Letters, 1996
- Compatibility of NiSi in the self-aligned suicide process for deep submicrometer devicesThin Solid Films, 1995
- Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSIIEEE Transactions on Electron Devices, 1995
- Thermal stability of NiSi2 on high-dose ion-implanted (001) SiJournal of Applied Physics, 1992
- Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/IEEE Transactions on Electron Devices, 1991
- Self-aligned silicides or metals for very large scale integrated circuit applicationsJournal of Vacuum Science & Technology B, 1986
- Development of the self-aligned titanium silicide process for VLSI applicationsIEEE Transactions on Electron Devices, 1985