Excitons in GaAsAlGaAs quantum wells: Effects of substrate orientation
- 31 July 1992
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 83 (2) , 89-91
- https://doi.org/10.1016/0038-1098(92)90881-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Initial Growth Mechanism of GaAs on Si(110)Japanese Journal of Applied Physics, 1990
- Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1990
- Exciton mixing in quantum wellsPhysical Review B, 1988
- Exciton binding energy in (Al,Ga)As quantum wells: Effects of crystal orientation and envelope-function symmetryPhysical Review B, 1988
- Effect of Subband Coupling on Exciton Binding Energies and Oscillator Strengths in GaAs-Ga
1-
x
Al
x
As Quantum WellsEurophysics Letters, 1988
- Oscillator strength and optical selection rule of excitons in quantum wellsPhysical Review B, 1988
- AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1986
- Molecular beam epitaxial growth of GaP on SiJournal of Applied Physics, 1984
- Interface morphology studies of (110) and (111) Ge-GaAs grown by molecular beam epitaxyApplied Physics Letters, 1982
- Polar heterojunction interfacesPhysical Review B, 1978