Initial Growth Mechanism of GaAs on Si(110)
- 1 March 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (3R)
- https://doi.org/10.1143/jjap.29.551
Abstract
We report the initial growth mechanism of GaAs on Si(110) by molecular beam epitaxy. From in-situ reflection high-energy electron diffraction (RHEED) measurements we infer an initial two-dimensional growth mode. Streak RHEED patterns were observed up to about 20 Åthickness of GaAs epitaxial growth. With further deposition, extra spots appeared due to twins. We propose a model in which the twins are formed from antiphase domain boundaries.Keywords
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