The Thermal Expansion Coefficient of GaxIn1-xAsyP1−y Epitaxial Layers Grown on InP Substrate
- 16 January 1986
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 93 (1) , 143-149
- https://doi.org/10.1002/pssa.2210930118
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The Ionicity Dependence of the Interatomic Potential Parameters of Covalently Bonded MaterialsPhysica Status Solidi (b), 1985
- The linear thermal expansion coefficient of a GaxIn1-xAsyyP1y layer on in P:Sn substratePhysica Status Solidi (a), 1984
- The influence of free carriers on the equilibrium lattice parameter of semiconductor materialsPhysica Status Solidi (a), 1983
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- The thermal-expansion parameters of some GaxIn1−xAsyP1−x alloysApplied Physics Letters, 1979
- X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layersJournal of Crystal Growth, 1978
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InPApplied Physics Letters, 1978
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970
- Theory of the Third-Order Elastic Constants of Diamond-Like CrystalsPhysical Review B, 1966