Low-threshold disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum well lasers by open-tube rapid thermal annealing
- 31 December 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (27) , 2904-2906
- https://doi.org/10.1063/1.103748
Abstract
AlxGa1−xAs‐GaAs single stripe quantum well heterostructure (QWH) lasers fabricated via Si impurity‐induced layer disordering (IILD) in an As‐free open tube rapid thermal annealing furnace are reported. The Si IILD, with good surface morphology, is obtained using a Si/Si3N4 source layer with the QWH wafer in face‐to‐face contact with a GaAs substrate during the anneal (13 min, 1000 °C). Continuous wave (cw) 300 K operation of the lasers with uncoated facets has produced output powers as high as 25 mW/facet with threshold currents as low as 7 mA. The devices operate single mode at a wavelength of 812 nm and have high differential quantum efficiencies of ∼44%, with some as high as 57%.Keywords
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