Si incorporation in laser-melted AlxGa1−xAs-GaAs quantum well heterostructures from a dielectric source
- 15 December 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (12) , 6174-6178
- https://doi.org/10.1063/1.346907
Abstract
Data are presented describing the incorporation of Si in locally laser‐melted AlxGa1−xAs‐GaAs quantum well heterostructures from a thin‐film dielectric source. The composition of the melted material, the effects of the Si source (SiO2 or Si3N4) on impurity incorporation, and the doping behavior are examined via secondary‐ion mass spectroscopy, electron dispersion x‐ray spectroscopy, transmission electron microscopy, and scanning electron microscopy. The data indicate that upon melting, a (Si)y(AlxGa1−xAs)1−y alloy is formed from which impurity‐induced layer disordering may be effected. After annealing the melt region is found to contain crystalline segregates, which are attributed to rapid thermal quenching of the melt. Applications of these results to the fabrication of buried‐heterostructure lasers by laser‐assisted disordering are discussed.This publication has 17 references indexed in Scilit:
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