Impurity-induced layer disordering in In0.5(Alx Ga1−x)0.5P-InGaP quantum-well heterostructures: Visible-spectrum-buried heterostructure lasers
- 15 July 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (2) , 482-487
- https://doi.org/10.1063/1.343562
Abstract
Diffusion of Si into quantum‐well heterostructures and superlattices employing the high gap III‐V quaternary system Iny (AlxGa1−x )1−yP is shown to result in impurity‐induced layer disordering. Secondary ion mass spectroscopy, transmission electron microscopy, and photoluminescence data indicate that the diffusion of Si into an InAlP‐InGaP superlattice grown lattice matched on GaAs (y≊0.5) results in the intermixing of the layers, thus forming an alloy of average composition. Buried‐heterostructure lasers are fabricated using Si layer disordering of In0.5 (Alx Ga1−x )0.5 P p‐n quantum‐well heterostructures. The disorder‐defined stripe‐geometry diode lasers operate pulsed at 300 K near 6400 Å. Continuous wave operation at λ∼6255 Å is achieved at −47 °C.This publication has 22 references indexed in Scilit:
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