Coupled-stripe AlxGa1−xAs-GaAs quantum well lasers defined by vacancy-enhanced impurity-induced layer disordering from (Si2)y(GaAs)1−y barriers
- 23 March 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (12) , 757-759
- https://doi.org/10.1063/1.98036
Abstract
Data are presented showing that high‐performance (>100 mW) AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) coupled‐stripe laser arrays can be realized by vacancy‐enhanced impurity‐induced layer disordering (IILD) employing an internal (Si2)y(GaAs)1−y barrier. This form of Si IILD (i.e., layer disordering from a ‘‘finite’’ internal Si source) results in coupled‐emitter laser operation, even for relatively large stripe (7–10 μm) and spacing dimensions (2 μm), at currents just above threshold and higher. As a separate issue, the Si IILD QWH laser cross sections show that Si diffusion from a surface source is ‘‘slower’’ than the simultaneous vacancy diffusion from an SiO2 surface encapsulant (‘‘cap’’).Keywords
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