Prevention of spalling by the self-formed reaction barrier layer on controlled collapse chip connections under bump metallization
- 1 January 2003
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 32 (1) , L1-L3
- https://doi.org/10.1007/s11664-003-0251-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Interfacial Microstructure Evolution Between Eutectic SnAgCu Solder and Al/Ni(V)/Cu Thin FilmsJournal of Materials Research, 2002
- Morphology of interfacial reaction between lead-free solders and electroless Ni–P under bump metallizationJournal of Applied Physics, 2000
- Interfacial reaction and wetting behavior in eutectic SnPb solder on Ni/Ti thin films and Ni foilsJournal of Applied Physics, 1999
- Development of under bump metallizations for flip chip bonding to organic substratesJournal of Electronic Materials, 1999
- Solder reaction-assisted crystallization of electroless Ni–P under bump metallization in low cost flip chip technologyJournal of Applied Physics, 1999
- Direct correlation between mechanical failure and metallurgical reaction in flip chip solder jointsJournal of Applied Physics, 1999
- Dewetting of molten Sn on Au/Cu/Cr thin-film metallizationApplied Physics Letters, 1996
- Spalling of Cu6Sn5 spheroids in the soldering reaction of eutectic SnPb on Cr/Cu/Au thin filmsJournal of Applied Physics, 1996
- SLT Device Metallurgy and its Monolithic ExtensionIBM Journal of Research and Development, 1969
- Studies of the SLT Chip Terminal MetallurgyIBM Journal of Research and Development, 1969