Determination of refractive index and study of absorption in wide gap II–VI semiconductor superlattices
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 807-810
- https://doi.org/10.1016/0022-0248(91)91086-p
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- MBE-grown ZnTe-ZnS strained-layer superlatticesJournal of Crystal Growth, 1989
- Resonant Raman scattering in ZnTe-ZnSe strained layer superlatticesJournal of Applied Physics, 1987
- Growth of ZnSe-ZnS Strained-Layer Superlattices by Metallorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- Growth and characterization of ZnSe-ZnTe strained-layer superlatticesJournal of Crystal Growth, 1987
- ZnSe-ZnS strained-layer superlattice grown by low pressure metalorganic vapor phase epitaxy using methylalkylsApplied Physics Letters, 1986
- Photoluminescence study of ZnSe–ZnTe strained-layer superlattices grown on InP substratesJournal of Applied Physics, 1986
- Optical constants of GaAs-As superlattices and multiple quantum wellsPhysical Review B, 1986
- Raman scattering from ZnTe-ZnSe strained-layer superlatticesApplied Physics Letters, 1986
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984
- Refractive index of GaAs-AlAs superlattice grown by MBEJournal of Electronic Materials, 1983