Photoenhanced thermal oxidation of InP
- 15 January 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (2) , 637-642
- https://doi.org/10.1063/1.334756
Abstract
The growth rate of laser-photoenhanced thermally grown native oxides of InP in a N2O ambient and its dependence on growth condition are presented. Increased laser power, substrate temperature, and N2O pressure are observed to increase the growth rate. The topography and the composition of these oxides have been studied, using secondary electron microscopy and x-ray photoemission spectroscopy, respectively. The oxide layers contain In2O3 and a phosphate, probably InPO4. The enhanced growth appears to be caused by both excited oxidizing species and a photon-enhanced surface reaction.This publication has 21 references indexed in Scilit:
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