Ion-beam mixing in silicon and germanium at low temperatures
- 1 May 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 209-210, 107-114
- https://doi.org/10.1016/0167-5087(83)90788-3
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Atomic mixing in ion impact: A collision cascade modelApplied Physics Letters, 1981
- Ion beam mixing in amorphous silicon II. Theoretical interpretationNuclear Instruments and Methods, 1981
- Ion beam mixing in amorphous silicon I. Experimental investigationNuclear Instruments and Methods, 1981
- Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structuresNuclear Instruments and Methods, 1981
- Solute segregation and precipitate stability in irradiated alloysNuclear Instruments and Methods, 1981
- Theoretical aspects of atomic mixing by ion beamsNuclear Instruments and Methods, 1981
- Distortion of depth profiles during ion bombardment II. Mixing mechanismsNuclear Instruments and Methods, 1981
- Distortion of depth profiles during sputteringNuclear Instruments and Methods, 1980
- Depth dependence of atomic mixing by ion beamsApplied Physics Letters, 1979
- The depth resolution of sputter profilingApplied Physics A, 1979