Ion beam mixing in amorphous silicon II. Theoretical interpretation
- 1 May 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 182-183, 53-61
- https://doi.org/10.1016/0029-554x(81)90670-4
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Recoil mixing in solids by energetic ion beamsNuclear Instruments and Methods, 1980
- Ion-beam-induced migration and its effect on concentration profilesNuclear Instruments and Methods, 1980
- Distortion of depth profiles during sputteringNuclear Instruments and Methods, 1980
- Recoil implantation from a thin source: II. Extension to the problems of recoil sputtering and of moderately thick sourcesJournal of Nuclear Materials, 1978
- Energy spikes in Si and Ge due to heavy ion bombardmentRadiation Effects, 1978
- Thermal spikes and activated processesRadiation Effects, 1976
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969
- Ranges of projectiles in amorphous materialsCanadian Journal of Physics, 1968
- Diffusion in Binary AlloysPhysical Review B, 1949
- Stochastic Problems in Physics and AstronomyReviews of Modern Physics, 1943