Electrical characteristics of ion-implanted laser-annealed silicon
- 1 January 1980
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 47 (1-4) , 41-44
- https://doi.org/10.1080/00337578008209186
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiationApplied Physics Letters, 1978
- Lattice location of Te in laser-annealed Te-implanted siliconJournal of Applied Physics, 1978
- Physical and electrical properties of laser-annealed ion-implanted siliconApplied Physics Letters, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978