Ge growth on Si using atomic hydrogen as a surfactant
- 3 January 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (1) , 52-54
- https://doi.org/10.1063/1.110919
Abstract
We have examined the effect of adsorbed atomic hydrogen (H) on the evolution of Ge films on Si(001) and (111) substrates in solid-source molecular-beam epitaxy. The H flux was supplied separately from the Ge flux. By cross-sectional high-resolution transmission electron microscopy it was observed that H acted as a surfactant during growth, suppressing island formation of Ge on both substrates. The effect of the H surfactant on variation of the growth mode is also discussed.This publication has 20 references indexed in Scilit:
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