Photoluminescence Analysis of Impurities in Epitaxial Silicon Crystals

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Abstract
The photoluminescence (PL) technique has been applied for the first time to the quantitative analysis of shallow impurities incorporated intentionally and unintentionally in silicon epitaxial layers with a thickness of about 3 µm. The PL from the samples is the overlapping of the PL's from the substrate and from the epitaxial layer. The species of impurities incorporated in the epitaxial layer can be definitely identified by the PL analysis. It is demonstrated that the PL intensity ratio of the impurity component for the epitaxial layer to that for the substrate can be used as a measure of the impurity concentration in the epitaxial layer in the range between 1013 and 1016 cm-3.