Photoluminescence of organometallic vapor phase epitaxial GaInAs

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Abstract
The low-temperature photoluminescence (PL) characteristics of undoped organometallic vapor phase epitaxial GaInAs lattice matched to InP have been studied and related to different growth conditions. By varying the excitation intensity, PL transitions due to excitons and donor-acceptor pairs have been identified. Analysis of the two donor-acceptor pair peaks yields acceptor activation energies of 13 and 24 meV, which are attributed to C and Zn, respectively. Carbon incorporation is seen to decrease markedly, accompanied by a substantial increase in mobility (10 000 and 40 000 cm2/Vs at 300 and 77 K, respectively) when the growth temperature is increased to 650 °C and the V/III ratio is kept above ∼30. The importance of accounting for lattice mismatch in interpreting PL half-widths is evidenced by the doubling of the 77-K PL half-width for a lattice mismatch of only ∼10−3.