Studies on the thickness-dependent photofield effect in amorphous hydrogenated silicon thin films
- 20 March 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 198 (1) , 1-8
- https://doi.org/10.1016/0040-6090(91)90318-r
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Temperature-dependent effects in field-effect measurements on hydrogenated amorphous silicon thin-film transistorsPhilosophical Magazine Part B, 1988
- Flat band voltage determination from temperature dependent field effect conductance in a-Si:HJournal of Non-Crystalline Solids, 1987
- Anomalous surface photoconductivity in hydrogenated amorphous siliconSolid State Communications, 1983
- Annealing and light induced changes in the field effect conductance of amorphous siliconJournal of Applied Physics, 1982
- Effect of annealing and light exposure on the field-effect density of states in glow-discharge a-Si: HPhilosophical Magazine Part B, 1982
- Application of amorphous silicon field effect transistors in addressable liquid crystal display panelsApplied Physics A, 1981
- Analysis of field-effect-conductance measurements on amorphous semiconductorsPhilosophical Magazine Part B, 1981
- A Simple Scheme for Evaluating Field Effect DataPhysica Status Solidi (b), 1980
- Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductorsPhilosophical Magazine Part B, 1980
- An amorphous silicon thin film transistor: Theory and experimentSolid-State Electronics, 1976