Electrical doping of HgCdTe by ion implantation and heat treatment
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4) , 700-722
- https://doi.org/10.1016/0022-0248(90)90798-p
Abstract
No abstract availableKeywords
This publication has 65 references indexed in Scilit:
- State of the art of LPE HgCdTe at LIRJournal of Crystal Growth, 1988
- The role of epitaxy and substrate on junction formation in ion-implanted HgCdTeJournal of Crystal Growth, 1985
- Formation of p on n photodiodes in Hg1−xCdxTe by ion implantation and cw CO2 laser annealingJournal of Crystal Growth, 1985
- Evidence, by transport measurements under hydrostatic pressure, of resonant level induced by implantation defects in expitaxial layers of Hg1−xCdxTeJournal of Crystal Growth, 1985
- Some aspects of Li behavior in ion implanted HgCdTeJournal of Vacuum Science & Technology A, 1983
- Boron ion implantation in Hg1−xCdxTeJournal of Applied Physics, 1982
- The vaporisation of Hg1-xCdxTe crystals-a case of gross incongruencyJournal of Physics D: Applied Physics, 1979
- Infrared photovoltaic detectors from ion-implanted CdxHg1−xTeApplied Physics Letters, 1973
- Hg-implanted Hg1−x Cdx Te infrared photovoltaic detectors in the 8- to 14-μm rangeApplied Physics Letters, 1973
- TYPE CONVERSION AND n-p JUNCTION FORMATION IN Hg1−xCdxTe PRODUCED BY PROTON BOMBARDMENTApplied Physics Letters, 1971