Boron ion implantation in Hg1−xCdxTe

Publisher Website
Google Scholar
Abstract
Boron was implanted in p‐type Hg1−xCdxTe with 0.23⩽x⩽0.28. The implantation was carried out using fluences between 1×1013 and 7×1016 B+ cm−2 and ion energies of 120 and 350 keV with the samples either at room temperature or at 80 K. For fluences of more than 1×1013 B+ cm−2 a saturation of the electron concentration at a level of 3×1018 cm−3 was obtained. No carrier freezeout was found in the implanted layers at temperatures between 10 and 300 K. The n‐type conductivity persisted after annealing for 30 min at 150 °C and disappeared after annealing at 300 and 500 °C for 30 min. The boron concentration profiles analyzed by secondary ion mass spectrometry were found to be unaffected by annealing. The results suggest that the n‐type conduction is caused by implantation damage and that the implanted boron is bound in immobile complexes and does not become effective as a donor.