Studies on the suppression of Ge segregation during Si overgrowth on Ge(n ML)Si(100) substrates by gas-source MBE
- 1 May 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 163 (1-2) , 105-112
- https://doi.org/10.1016/0022-0248(95)01042-4
Abstract
No abstract availableKeywords
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