Single-mode single-lobe operation of broad area AlxGa1−xAs-GaAs quantum well lasers
- 6 October 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (14) , 883-885
- https://doi.org/10.1063/1.97524
Abstract
A buried heterostructure broad area quantum well heterostructure AlxGa1−xAs‐GaAs laser diode modified with a small multiple stripe pattern near its center is described that operates single mode and narrow lobe (Ith) to 2Ith or 3Ith. The broad area (wide stripe) buried heterostructure laser is made by impurity‐induced layer disordering.Keywords
This publication has 14 references indexed in Scilit:
- Interelement coupling in gain-guided diode laser arraysApplied Physics Letters, 1986
- Modeling of injection-locking phenomena in diode-laser arraysOptics Letters, 1986
- Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disorderingApplied Physics Letters, 1986
- Low threshold planar buried heterostructure lasers fabricated by impurity-induced disorderingApplied Physics Letters, 1985
- Transverse modes of gain-guided coupled-stripe lasers: External cavity control of the emitter spacingApplied Physics Letters, 1985
- Donor-induced disorder-defined buried-heterostructure AlxGa1−xAs-GaAs quantum-well lasersJournal of Applied Physics, 1985
- Impurity-disordered, coupled-stripe AlxGa1−xAs-GaAs quantum well laserApplied Physics Letters, 1985
- Stripe-geometry AlxGa1−xAs-GaAs quantum well heterostructure lasers defined by Si diffusion and disorderingApplied Physics Letters, 1985
- Impurity-induced disordering of single well AlxGa1−xAs-GaAs quantum well heterostructuresApplied Physics Letters, 1984
- IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavityApplied Physics Letters, 1981