II-VI laser diode with low operating voltage andlong device lifetime
- 17 September 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (19) , 1891-1892
- https://doi.org/10.1049/el:19981288
Abstract
The authors have fabricated a ZnCdSe/ZnSSe/ZnMgSSe separated confinement heterostructure (SCH) laser diode (LD) with a 3 nm ZnTe:N contact layer/ZnSe:N/ZnTe:N superlattice layer (SL)/ZnSe:N cap layer with optimised [N] and a ZnCdSe active layer with VI-rich growth conditions and optimised stripe width. The LD achieved over 300h LD operation at a constant output power of 1 mW at low voltage (4 V).Keywords
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