Kinetics and mechanism of oxide formation on Cr thin films

Abstract
Oxidation kinetics of thin films of Cr in the temperature range 490-630 degrees C have been studied using backscattering spectrometry and X-ray diffraction. In the studied region the growth of the oxide Cr2O3 has been found to obey a parabolic growth-rate law with an activation energy of 1.2 eV. Implanted Xe markers show that the growth of the oxide occurs almost entirely at the surface and is controlled by the motion of Cr species in the oxide.

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