Determination of the noise source parameters in AlInAs/GaInAs HEMT heterostructures based on measured noise temperature dependence on the electric field
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The noise temperature dependence on the electric field in an AlInAs/GaInAs HEMT heterostructure has been measured. It was found that the dependence of the noise temperature on the electric field in GaAs MESFETs and in AlInAs/GaInAs HEMTs are remarkably different. For this reason a different model must be used for AlInAs/GaInAs HEMTs. Based on the measured noise temperature dependence on the electric field, am analytic noise model for the AlInAs/GaInAs HEMT has been developed. The noise source parameters were calculated and compared with extracted noise source parameters from noise measurements Author(s) Bergamaschi, C. Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland Patrick, W. ; Baechtold, W.Keywords
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