Metastable energy distribution and localization of spatially indirect excitons
- 15 April 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (16) , 9477-9480
- https://doi.org/10.1103/physrevb.45.9477
Abstract
We report the electric-field-induced localization of extremely-long-lived excitons, with lifetimes of up to 5 ms in coupled GaAs/ As quantum wells. The effect is manifested in a field-sensitive temperature dependence of the exciton recombination time that is well fit by a model based on a field-dependent mobility edge. The observed field dependence of the exciton through the transition from a mobile to a localized gas is consistent with an exciton gas that is in metastable equilibrium, and is not consistent with either a Bose distribution or with a spatial distribution dominated by dipole-dipole repulsion.
Keywords
This publication has 21 references indexed in Scilit:
- Transport properties of excitons in GaAs quantum wells−time-resolved Raman probeApplied Physics Letters, 1990
- Excitonic relaxation processes in quantum well structuresJournal of Luminescence, 1989
- Reduction of trap concentration and interface roughness of GaAs/AlGaAs quantum wells by low growth rates in molecular beam epitaxyApplied Physics Letters, 1989
- Two-dimensional exciton transport in GaAs/GaAlAs quantum wellsApplied Physics Letters, 1988
- Interface Roughness Scattering and Electron Mobilities in Thin GaAs Quantum WellsEurophysics Letters, 1988
- Interface roughness scattering in GaAs/AlAs quantum wellsApplied Physics Letters, 1987
- Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum-well heterostructuresPhysical Review B, 1985
- Studies of exciton localization in quantum-well structures by nonlinear-optical techniquesJournal of the Optical Society of America B, 1985
- Localized and delocalized two-dimensional excitons in GaAs-AlGaAs multiple-quantum-well structuresPhysical Review B, 1984
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981