Early stages of the heteroepitactic growth of hematite on (0001) Al2O3 by transmission electron microscopy
- 18 September 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (12) , 1202-1204
- https://doi.org/10.1063/1.102464
Abstract
A new method for studying the early stages of the growth of oxide epilayers by transmission electron microscopy (TEM) is described. The technique uses well‐characterized, single‐crystal TEM foils as substrates for the deposition process. In the present study, chemical vapor deposition was used to form small islands (50–300 nm) of α‐Fe2O3 on (0001) oriented Al2O3 thin‐foil substrates. The preferential nucleation of islands at surface steps on the alumina is clearly demonstrated. Selected area diffraction and moiré fringe pattern analysis are used to show the epitactic nature of the growth and to study the island morphology.Keywords
This publication has 7 references indexed in Scilit:
- Metal-Ceramic Interphase Interfaces: Preparation and Structural CharacterizationMRS Proceedings, 1988
- The Structure of Surface Steps on Low-Index Planes of Oxides.MRS Proceedings, 1985
- Surface Steps on α-Alumina FilmsMRS Proceedings, 1984
- Ion milling of materials science specimens for electron microscopy: A reviewJournal of Electron Microscopy Technique, 1984
- On the reduction of nickel oxideSurface Science, 1982
- Détermination de la forme d'équilibre de cristaux d'hématite α-Fe2O3: II. Étude expérimentaleJournal of Crystal Growth, 1973
- Misfit dislocations and the alignment of epitaxial islandsSurface Science, 1972