The Structure of Surface Steps on Low-Index Planes of Oxides.
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Surface steps have been observed on low-index planes of alpha-alumina and spinel. The steps were produced by annealing both bulk and perforated thin foil single crystals. A comparative study of bright-field TEM and dark-field REM of the same crystals makes it possible to construct models for the surface structure. Many faceted steps can be observed on the (0001), {0112}, {1010} and {1120} surfaces of alpha-alumina and on the {100} surface of spinel. A detailed study of step faceting and step facet movement during reheating is presented.Keywords
This publication has 12 references indexed in Scilit:
- The image contrast of surface steps in reflection electron microscopyUltramicroscopy, 1985
- Segregation of Mg to the (0001) Surface of Doped SapphireJournal of the American Ceramic Society, 1985
- Reflection electron microscopy of epilayers grown by molecular beam epitaxyPhilosophical Magazine A, 1984
- Growth of α‐Al2O3 Within a Transition Alumina MatrixJournal of the American Ceramic Society, 1984
- Faceted Grain Boundaries in Al2O3Journal of the American Ceramic Society, 1984
- Atomic and other structures of cleaved GaAs(110) surfacesSurface Science, 1984
- Reflection electron microscopy (REM) of vicinal surfaces of fcc metalsUltramicroscopy, 1983
- Reflection Electron Microscopy and Diffraction from Crystal SurfacesMRS Proceedings, 1983
- Observation of atomic steps of (111) surface of a silicon crystal using bright field electron microscopyUltramicroscopy, 1981
- Heteroepitaxial Semiconductors for Electronic DevicesJournal of the Electrochemical Society, 1979