The effects of silicon and selenium doping on gallium arsenide laser characteristics
- 1 February 1966
- journal article
- Published by IOP Publishing in British Journal of Applied Physics
- Vol. 17 (2) , 187-190
- https://doi.org/10.1088/0508-3443/17/2/305
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERSApplied Physics Letters, 1964
- New Junction Laser Resonant StructuresJournal of Applied Physics, 1964
- STIMULATED EMISSION OF EXCITON RECOMBINATION RADIATION IN GaAs p-n JUNCTIONSApplied Physics Letters, 1963
- Behavior of selenium in gallium arsenideJournal of Physics and Chemistry of Solids, 1963
- SEMICONDUCTOR MASER OF GaAsApplied Physics Letters, 1962
- STIMULATED EMISSION OF RADIATION FROM GaAs p-n JUNCTIONSApplied Physics Letters, 1962
- Coherent Light Emission From GaAs JunctionsPhysical Review Letters, 1962