Double solid phase epitaxy of germanium-implanted silicon on sapphire
- 24 June 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (25) , 2927-2929
- https://doi.org/10.1063/1.104724
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Comparison of electrical defects in Ge+ and Si+ preamorphized BF2-implanted siliconJournal of Applied Physics, 1987
- Amorphisation of silicon by bombardment with group IV ionsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Defects and leakage currents in BF2-implanted preamorphized siliconJournal of Applied Physics, 1986
- Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized siliconApplied Physics Letters, 1984
- Deep levels in electron irradiated edge-defined film-fed growth ribbon siliconJournal of Applied Physics, 1981
- Electrical measurements of boron implanted silicon on sapphire and bulk siliconRadiation Effects, 1980