Interaction between dislocations and In in In-doped GaAs single crystals under high-temperature plastic deformation
- 1 April 1988
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 57 (4) , 671-676
- https://doi.org/10.1080/01418618808214416
Abstract
The interaction between dislocations and indium has been studied in In-doped GaAs under high-temperature plastic deformation. This interaction is revealed by yield drops in the stress-strain curves after stress relaxations, and by serrated yielding (the Portevin-Le Chatelier effect). Static ageing can be shown to be due to elastic interactions, in agreement with the model recently proposed by Ehrenreich and Hirth (1986).Keywords
This publication has 19 references indexed in Scilit:
- High-Temperature Mechanical Properties of GaAs Single Crystals: Effect of In “Doping” and of EnvironmentEurophysics Letters, 1986
- Hardening and serrated flow behaviour in the 300–500 K range for Eu-doped alkali halidesActa Metallurgica, 1986
- Study of an experimental technique for high-temperature deformation of compound semiconductors (liquid encapsulation)Physica Status Solidi (a), 1985
- Mechanism for dislocation density reduction in GaAs crystals by indium additionApplied Physics Letters, 1985
- The theory and practice of dislocation reduction in GaAs and InPJournal of Crystal Growth, 1984
- Snoek rearrangement during strain aging in calcium-doped NaCl crystalsMaterials Science and Engineering, 1981
- Dynamic strain ageing in stoichiometric rutile single crystalsPhilosophical Magazine A, 1980
- Interdiffusion between GaAs and AlAsApplied Physics Letters, 1976
- Serrated flow in nickel oxide single crystalsScripta Metallurgica, 1975
- DYNAMIC STRAIN AGEING IN LiF SINGLE CRYSTALSLe Journal de Physique Colloques, 1973