Lifetimes and Capture Cross Sections in Gold-Doped Silicon

The free lifetimes of electrons and holes in gold-doped silicon were determined by applying an electric field and measuring the amplitude of the pulses produced by $\alpha$-particles. Knowing the impurity concentrations and assuming that the lifetimes is determined primarily by capture at the gold-sites, the cross sections for capture were calculated. The value for either electrons or holes at neutral gold sites is 2×${10}^{-15\mathrm{}}$ ${\mathrm{cm}}^2$ and at oppositely-charged sites, 1×${10}^{-13\mathrm{}}$ ${\mathrm{cm}}^2$.