Impurity excited state lifetimes

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Abstract
Several novel experiments using the method of delayed breakdown (Lehto and Proctor 1977) have been made. The identification of the two relaxation processes observed by Lehto (1977) with specific 2s states has been made by experiments with transient excitation. Four long-lived hole states in B-doped Si have been seen, and slow relaxation from excited acceptor states associated with the p1/2 band, located in the continuum of the p3/2 band, have been observed. Transient impurity band conduction having a time dependence closely related to the populations of the 2s A1 and 2s T1+E states has been observed, strongly suggesting that this phenomenon is due simply to the occupation of these states and that many low temperature properties of semiconductors may be due to long-lived excited impurity states.