Formation of ZnGa2Se4Epitaxial Layer during Molecular Beam Epitaxial Growth of Ga2Se3on ZnSe
- 1 August 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (8A) , L1059
- https://doi.org/10.1143/jjap.33.l1059
Abstract
Epitaxial ZnGa2Se4 films were successfully grown on (100)GaAs substrates for the first time. When Ga2Se3/ZnSe heterostructures were prepared on (100)GaAs by molecular beam epitaxy (MBE), a ZnGa2Se4 epitaxial layer was obtained at temperatures above 540° C. The electron diffraction and Raman spectra revealed that the c-axis-oriented ZnGa2Se4 epitaxial film with a defect chalcopyrite structure was formed during the MBE growth of Ga2Se3 on ZnSe. Furthermore, a broad emission peak centered around 670 nm was observed in epitaxial ZnGa2Se4 film in low-temperature photoluminescence measurements.Keywords
This publication has 11 references indexed in Scilit:
- Polarized photoluminescence in vacancy-ordered Ga2Se3Journal of Crystal Growth, 1994
- Anomalous anisotropy in the absorption coefficient of vacancy-ordered Ga2Se3Journal of Electronic Materials, 1993
- Optical Anisotropy of Vacancy-Ordered Ga2Se3 Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1992
- Raman Study of Epitaxial Ga2Se3 Films Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1992
- Growth and characterization of Ga2Se3 by molecular beam epitaxyJournal of Crystal Growth, 1991
- Vacancy ordering of Ga2Se3 films by molecular beam epitaxyApplied Physics Letters, 1991
- Structure of ZnGa2S4, a defect sphalerite derivativeActa Crystallographica Section C Crystal Structure Communications, 1991
- The Peculiarities of the Temperature Broadening of Raman Light Scattering Lines in Zn(Cd)Ga2Se4 Single CrystalsPhysica Status Solidi (b), 1990
- Quasi-Continuously Distributed Traps and Photoluminescence in ZnGa2Se4 Single CrystalsPhysica Status Solidi (a), 1989
- Reflectivity spectra of CdIn2S4, ZnIn2S4, ZnGa2Se4and CdGa2S4Journal of Physics C: Solid State Physics, 1984