Low-power deposition of fluorinated microcrystalline silicon hydrogen alloy films
- 15 May 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (10) , 4024-4027
- https://doi.org/10.1063/1.343432
Abstract
Fluorinated microcrystalline silicon hydrogen alloy films have been prepared by the radio frequency glow-discharge decomposition of silicon tetrafluoride/hydrogen mixtures. Thereby, μc-Si:F:H films with high dark conductivity (∼10−3 Ω−1 cm−1), high photoconductivity (∼10−4 Ω−1 cm−1), showing crystalline structure in selected-area transmission electron microscope diffraction patterns as well as sharp infrared absorption and Raman shift spectra have been obtained under conditions of low-power density (∼0.15 W cm−2) and hydrogen dilution (∼20%).This publication has 12 references indexed in Scilit:
- Characterization of microcrystalline silicon films prepared by the glow discharge method under different deposition conditionsThin Solid Films, 1988
- Degradation of tin-doped indium-oxide film in hydrogen and argon plasmaJournal of Applied Physics, 1987
- Photo-induced changes in the properties of undoped and boron-doped a-Si:H filmsPhilosophical Magazine Part B, 1986
- Local bonding of hydrogen in a-Si:H, a-Ge:H and a-Si, Ge:H alloy filmsJournal of Non-Crystalline Solids, 1985
- Crystallization, Doping, Orientation and Grain-Size of Microcrystalline Silicon and GermaniumMRS Proceedings, 1984
- High-frequency electro-optic oscillator using an integrated interferometerApplied Physics Letters, 1982
- Determination of the H distribution in reactively sputtered amorphous silicon-hydrogen alloys by proton nuclear magnetic resonanceJournal of Applied Physics, 1981
- Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees CJournal of Physics C: Solid State Physics, 1981
- Low-temperature crystallization of doped a-Si:H alloysApplied Physics Letters, 1980
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980