Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05≤x≤0.3
- 26 December 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (26) , 3362-3364
- https://doi.org/10.1063/1.112392
Abstract
The effective masses in remote doped Si/Si1−xGex hole quantum wells with 0.05≤x≤0.3, have been determined from the temperature dependence of the Shubnikov–de Haas oscillations. The values are lower than previously observed by other workers, but still somewhat higher than the theoretical Γ‐point values for the ground‐state heavy hole subband. The differences are attributed to finite carrier sheet densities and can be satisfactorily accounted for by nonparabolicity corrections.Keywords
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