High hole mobilities in a p-type modulation-doped Si/Si0.87Ge0.13/Si heterostructure
- 1 April 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (4) , 615-616
- https://doi.org/10.1088/0268-1242/8/4/023
Abstract
The authors' report the highest 4 K hole mobility (9300 cm2 V-1 s-1) observed so far in a Si/SiGe/Si heterostructure. It is tentatively concluded that this improvement over previous results is due to a reduction in interface charge and that the mobility is now limited by interface roughness scattering.Keywords
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