Effect of interface quality on the electrical properties of p-Si/SiGe two-dimensional hole gas systems
- 10 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (24) , 2567-2569
- https://doi.org/10.1063/1.103818
Abstract
Electrical properties have been examined for single Si/Si0.8Ge0.2 p-type modulation-doped heterostructures which have been grown by molecular beam epitaxy. It is shown that the two-dimensional hole gas in a normal modulation-doped heterostructure (doped layer on the surface side) has a higher mobility than in an inverted structure (doped layer on the substrate side). Secondary-ion mass spectrometry analysis indicates that the lower mobility in the inverted structure is due to surface segregation of boron. Hole mobilities as high as 6000 cm2/V s at 2 K and 3800 cm2/V s at 6 K have been obtained which are the highest values reported so far for Si/SiGe heterostructures.Keywords
This publication has 8 references indexed in Scilit:
- Performance and processing line integration of a silicon molecular beam epitaxy systemThin Solid Films, 1990
- High hole mobility in Si/Si1−xGex/Si p-type modulation-doped double heterostructuresApplied Physics Letters, 1989
- Surface Segregation at Boron Planar Doping in Silicon Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1988
- Physics and applications of GexSi1-x/Si strained-layer heterostructuresIEEE Journal of Quantum Electronics, 1986
- Modulation doping in GexSi1−x/Si strained layer heterostructuresApplied Physics Letters, 1984
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBEJapanese Journal of Applied Physics, 1984
- Valence-band parameters and hole mobility of Ge-Si alloys-theoryJournal of Physics C: Solid State Physics, 1983
- Moderate mobility enhancement in single period AlxGa1−x As/GaAs heterojunctions with GaAs on topJournal of Applied Physics, 1982