Moderate mobility enhancement in single period AlxGa1−x As/GaAs heterojunctions with GaAs on top
- 1 April 1982
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (4) , 3321-3323
- https://doi.org/10.1063/1.330992
Abstract
Selectively doped single period AlxGa1−x As/GaAs heterojunctions with the GaAs layer on top of AlxGa1−xAs were prepared by molecular beam epitaxy. Moderate electron mobility enhancement was achieved when the samples were grown near a substrate surface temperature of 700 °C. Samples grown well below and well above 700 °C did not show observable mobility enhancement. The samples grown at 700 °C and with an electron concentration of 1017 cm−3 exhibited 300 K mobilities of about 4 500 cm2/Vs and 78 K mobilities of 8500 cm2/Vs, which is about a factor of 2 higher than that of bulk GaAs at 78 K. To our knowledge, this is the first report of mobility enhancement in these inverted single period AlxGa1−x As/GaAs heterostructures.This publication has 12 references indexed in Scilit:
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