Electrical and optical properties of a-Si:H, a-SiGe:H and a-SiSn:H deposited by magnetron assisted silane decomposition
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 817-820
- https://doi.org/10.1016/s0022-3093(05)80245-5
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Deposition of amorphous hydrogenated semiconductors by magnetron assisted silane decompositionPhysica B: Condensed Matter, 1991
- Thermal equilibrium processes in carbon-based amorphous semiconducting ternary alloysPhilosophical Magazine Part B, 1990
- Properties of amorphous silicon tin alloys produced using the radio frequency glow discharge techniqueApplied Physics Letters, 1984
- Amorphous SiGe: H for High Performance Solar CellsJapanese Journal of Applied Physics, 1981