Annealing kinetics of {311} defects and dislocation loops in the end-of-range damage region of ion implanted silicon
- 15 March 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (6) , 2910-2913
- https://doi.org/10.1063/1.372276
Abstract
The evolution of both {311} defects and dislocation loops in the end-of-range (EOR) damage region in silicon amorphized by ion implantation was studied by ex situ transmission electron microscopy (TEM). The amorphization of a (100) n-type Czochralski wafer was achieved with a 20 keV 1×1015/cm2 Si+ ion implantation. The post-implantation anneals were performed in a furnace at 750 °C for times ranging from 10 to 370 min. After annealing the specimen for 10 min, the microstructure showed a collection of both {311} defects and small dislocation loops. The evolution of a specific group of defects was studied by repeated imaging of the same region after additional annealing. Quantitative TEM showed that {311} defects followed one of two possible evolutionary pathways as annealing times progressed; unfaulting to form dislocation loops or dissolving and releasing interstitials. Results indicate that in this temperature regime, {311} defects are the preferential site for dislocation loop nucleation.This publication has 11 references indexed in Scilit:
- {311} defects in silicon: The source of the loopsApplied Physics Letters, 1998
- Microstructural evolution of {113} rodlike defects and {111} dislocation loops in silicon-implanted siliconApplied Physics Letters, 1997
- Effect of implant temperature on transient enhanced diffusion of boron in regrown silicon after amorphization by Si+ or Ge+ implantationJournal of Applied Physics, 1997
- Diffusion of ion implanted boron in preamorphized siliconApplied Physics Letters, 1996
- Interstitial defects on {′113} in Si and Ge Line defect configuration incorporated with a self-interstitial atom chainPhilosophical Magazine A, 1994
- Identification of EOR defects due to the regrowth of amorphous layers created by ion bombardmentNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994
- A systematic analysis of defects in ion-implanted siliconApplied Physics A, 1988
- Electrical characterization of p+/n shallow junctions obtained by boron implantation into preamorphized siliconSolid-State Electronics, 1986
- Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in siliconPhilosophical Magazine A, 1981
- Damage produced by ion mplantation in siliconRadiation Effects, 1970