Electrical characterization of p+/n shallow junctions obtained by boron implantation into preamorphized silicon
- 30 November 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (11) , 1181-1187
- https://doi.org/10.1016/0038-1101(86)90062-6
Abstract
No abstract availableKeywords
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